Bipolaron formation in organic semiconductors at the interface with dielectric gates
نویسندگان
چکیده
منابع مشابه
Interface Structure of MoO3 on Organic Semiconductors
We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces...
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ژورنال
عنوان ژورنال: EPL (Europhysics Letters)
سال: 2012
ISSN: 0295-5075,1286-4854
DOI: 10.1209/0295-5075/98/47004